Holiday
GEN II綜二204 M7M8M9
1. 介紹晶圓代工廠的主要邏輯元件製程 2. 提供工業界生產的元件做實際的元件電性量測練習 3. 比較電腦模擬(TCAD simulation)結果與實際的元件電性量測結果
Course keywords: 金氧半場效電晶體(MOSFET)元件, 超陡後退井(SSRW), 反短通效應(Reverse Short Channel Effect), 反窄通效應(Reverse Narrow Width Effect), 熱載子效應(Short Channel Effect), 閘極介電層(Gate Dielectrics), 多晶矽閘極空乏(Poly Gate Depletion), 硼穿透 (Boron Penetration), 極淺接面(ultra shallow junction), 快速熱退火(Rapid Thermal Annealing, RTA), 輕微摻雜汲極法(Lightly Doped Drain, LDD), 應變矽(Strain Si), Fi ● 課程說明(Course Description) 1. 介紹晶圓代工廠的主要邏輯元件製程 2. 提供工業界生產的元件做實際的元件電性量測練習 3. 比較電腦模擬(TCAD simulation)結果與實際的元件電性量測結果 ● 指定用書(Text Books): 無 ● 參考書籍(References): Semiconductor Material and Device Characterization ● 教學方式(Teaching Method): 實體授課與實作 ● 教學進度(Syllabus) 1. Lecture of Integration Process________ 3W 2. Design of Test Devices and Patterns___ 1W 3. Layout of Test keys Introduction______ 1W 4. Process and Device TCAD Simulations (Tools)____ 3W 5. Device and Test Pattern Measurement (Lab) ____ 5W 6. Data Summary and Oral Reports _______ 2W ● 成績考核(Evaluation) 60% - Homework and Attendance 40% - Report in the Class ● 敘明學生使用 AI 的規則(Indicate which of the following options you use to manage student use of the AI) 本課程無涉及AI使用 Not applicable
MON | TUE | WED | THU | FRI | |
08:00108:50 | |||||
09:00209:50 | |||||
10:10311:00 | |||||
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12:10n13:00 | |||||
13:20514:10 | |||||
14:20615:10 | |||||
15:30716:20 | |||||
16:30817:20 | |||||
17:30918:20 | |||||
18:30a19:20 | |||||
19:30b20:20 | |||||
20:30c21:20 |
Average Percentage 83.77
Std. Deviation 4.3
元件部選修
半導體學院優先,第3次選課起開放全校修習
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